Summary

Cuprous oxide (Cu2O) are attractive semiconducting materials for solar cell applications due to their excellent properties. Among the various Cu2O deposition techniques electrodeposition is an attractive inexpensive method. Reported efficiencies for the electrodeposited Cu2O based solar cells are very much low compared to the theoretical efficiency of 20%. In our previous studies, we were able to produce Cu2O homojunction solar cell having Jsc of 12.67 mA/cm2 (almost theoretical value) but efficiency low as 1.3% due to the poor Voc and FF. These results show that the possibility of achieving 10% efficiency level for Cu2O homojunction device with the 3 fold increment of Voc and FF. Voc and FF can be improved by employing wide bandgap buffer layer to the device. In this proposed research project, it is planned to develop a high efficient low cost Cu2O homojunction solar cell device by introducing wide bandgap buffer layer (ZnO or ZnS) to the Cu2O homojunction. Interfacial properties between Cu2O homojunction and buffer layer will be investigated with different growth conditions. Finally, the photovoltaic performance of the Cu2O homojunction solar cell will be enhanced by matching the interfacial properties of Cu2O homojunction and buffer layer of solar cell structures adjusting the thin film growth parameters. It is further expected to improve the performance of the solar cells by studying the annealing effects and longtime stability. The available silicon solar modules are expensive and achieving their maximum efficiencies and the thin film semiconductors have a great potential in achieving larger efficiencies with much lower costs. This proposed research programme will underpin the development of a high efficient Cu2O based solar cell devices suitable for economically viable wider applications contributing to national development.

Objectives

Aim of this research project is to develop environmentally friendly, low cost, high efficient Cu2O homojunction solar cell. To achieve these aim, the following objectives will be addressed:

i. Growth and characterization of ZnO and improve the quality of the deposits by changing the deposition parameters

ii. Growth and characterization of ZnS and improve the quality of the deposits by changing the deposition parameters

iii. Fabrication of Cu2O homojunction solar cell by introducing ZnO as wide bandgap buffer material to the device and improve the quality and performance of the device by studying the interfacial properties of Cu2O homojuncton and ZnO buffer layer grown under different conditions.

iv. Fabrication of Cu2O homojunction solar cell by introducing ZnS as wide bandgap buffer material to the device and improve the quality and performance of the device by studying the interfacial properties of Cu2O homojuncton and ZnS buffer layer grown under different conditions.

v. Pre and post treatments (annealing and surface treatments) in improving the device performance.

Major Equipment Facilitated by Grant